Optical and Electrical Properties of Copper Telluride Thin Films

Ikhioya I. L.

Optical and Electrical Properties of Copper Telluride Thin Films

Authors

Ikhioya I. L.

Keywords:

Thin Film, Fluorine Tin oxide (FTO), Electrodeposition, Optical, Electrical properties

Abstract

Copper Telluride (CuTe) thin films have been successfully deposited on a glass substrate Fluorine Tin oxide (FTO) by electrodeposition technique. The absorbance was measured using M501 UV-visible spectrophotometer in the wavelength range of 200-900nm. Copper Telluride (CuTe) thin films were investigated at room temperature. Optical absorption study showed that CuTe films were of indirect band gap type semiconductor with band gap energy of 2.4-2.8eV.

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Published

2015-06-30

How to Cite

Ikhioya I. L. (2015). Optical and Electrical Properties of Copper Telluride Thin Films. International Journal of Research in Chemistry and Environment (IJRCE), 5(3), 28–32. Retrieved from https://ijrce.org/index.php/ijrce/article/view/324